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MMBT6517 - HIGH VOLTAGE TRANSISTOR

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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current —Collector Current Continuous Symbol VCEO VCBO VEBO IB c THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation, T"a = 25°C Derate above 25°C PD Storage Temperature Tstg Thermal Resistance Junction to Ambient RflJA 'Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. Value 350 350 5.0 250 500 Max 350 2.8 150 357 Unit Vdc Vdc Vdc mA mA Unit mW mW/°C °C "C/W MMBT6517 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) HIGH VOLTAGE TRANSISTOR NPN SILICON Refer to 2N6517 for graphs. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage dC = 1.
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