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MMBT6520 - HIGH VOLTAGE TRANSISTOR

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MMBT6520 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) HIGH VOLTAGE TRANSISTOR PNP SILICON Refer to 2N6520 for graphs. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current —Collector Current Continuous Symbol v CEO v CBO Vebo IB 'C THERMAL CHARACTERISTICS Characteristic Symbol *Total Device Dissipation, T^ = 25°C Derate above 25°C PD Storage Temperature T stq •Thermal Resistance Junction to Ambient R 0JA 'Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted. OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage
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