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MAXIMUM RATINGS
Rating CollectorrEmitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Symbol v CEO v CBO VEBO
ic
THERMAL CHARACTERISTICS
Characteristic
Symbol
*Total Device Dissipation, T/ = 25°C Derate above 25°C
PD
Storage Temperature
Tstg
"Thermal Resistance Junction to Ambient
R &JA
•Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Value 45 45 5.0 30
Max
350 2.8 150 357
Unit Vdc Vdc Vdc
mAdc
Unit
mW
mW/°C
°C °C/W
MMBT930
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
MMBT930 Datasheet
