MMBTA13LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBTA13LT1/D
Darlington Amplifier Transistors
NPN Silicon
COLLECTOR 3 BASE 1
MMBTA13LT1 MMBTA14LT1-
- Motorola Preferred Device
EMITTER 2
3 1 2
MAXIMUM RATINGS
Rating Collector
- Emitter Voltage Collector
- Base Voltage Emitter
- Base Voltage Collector Current
- Continuous Symbol VCES VCBO VEBO IC Value 30 30 10 300 Unit Vdc Vdc Vdc m Adc
CASE 318
- 08, STYLE 6 SOT- 23 (TO
- 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR- 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 Rq JA PD 556 300 2.4 Rq JA TJ, Tstg 417
- 55 to +150 Unit m W m W/°C °C/W m W m W/°C °C/W °C
DEVICE MARKING
MMBTA13LT1 = 1M; MMBTA14LT1 = 1N
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max...
