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Motorola Electronic Components Datasheet

MMBV3102LT1 Datasheet

Silicon Tuning Diode

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Tuning Diode
This device is designed in the Surface Mount package for general frequency control
and tuning applications. It provides solid–state reliability in replacement of mechanical
tuning methods.
High Q with Guaranteed Minimum Values at VHF Frequencies
Controlled and Uniform Tuning Ratio
MMBV3102LT1
Motorola Preferred Device
22 pF (Nominal)
30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODE
3
Cathode
1
Anode
3
1
2
CASE 318 – 08, STYLE 8
SOT– 23 (TO – 236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Reverse Voltage
Forward Current
Device Dissipation @ TA = 25°C
Derate above 25°C
VR 30
IF 200
PD 225
1.8
Junction Temperature
Storage Temperature Range
TJ +125
Tstg –55 to +150
DEVICE MARKING
MMBV3102LT1 = M4C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Breakdown Voltage
(IR = 10 µAdc)
V(BR)R
Reverse Voltage Leakage Current
(VR = 25 Vdc, TA = 25°C)
IR
Diode Capacitance Temperature Coefficient
(VR = 4.0 Vdc, f = 1.0 MHz)
TCC
Unit
Vdc
mAdc
mW
mW/°C
°C
°C
Min
30
Typ
300
Device
MMBV3102LT1
Ct, Diode Capacitance
VR = 3.0 Vdc, f = 1.0 MHz
pF
Min Nom Max
20 22 25
Q, Figure of Merit
VR = 3.0 Vdc
f = 50 MHz
Min
200
Max Unit
— Vdc
0.1 µAdc
— ppm/°C
CR, Capacitance Ratio
C3/C25
f = 1.0 MHz
Min Typ
4.5 4.8
Preferred devices are Motorola recommended choices for future use and best overall value.
5–138
Motorola Small–Signal Transistors, FETs and Diodes Device Data


Motorola Electronic Components Datasheet

MMBV3102LT1 Datasheet

Silicon Tuning Diode

No Preview Available !

TYPICAL CHARACTERISTICS
MMBV3102LT1
40
36
32
28
24
20
16
12
8.0
4.0
0
0.3
f = 1.0 MHz
TA = 25°C
0.5 1.0 2.0 3.0 5.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
20 30
20
TA = 25°C
10 f = 50 MHz
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0 3.0 6.0 9.0 12 15 18 21 24 27 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Figure of Merit
100
10
1.0
0.1
0.01
0.001
–60
VR = 20 Vdc
–20 0 +20
+60 +100
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Leakage Current
+140
1.04
1.03
VR = 3.0 Vdc
f = 1.0 MHz
1.02
1.01
1.00
0.99
0.98
0.97
0.96
–75
–50 –25 0 +25 +50 +75 +100 +125
TA, AMBIENT TEMPERATURE (°C)
Figure 4. Diode Capacitance
NOTES ON TESTING AND SPECIFICATIONS
1. CR is the ratio of CT measured at 3.0 Vdc divided by CT measured at 25 Vdc.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5–139


Part Number MMBV3102LT1
Description Silicon Tuning Diode
Maker Motorola
Total Page 2 Pages
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