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Motorola Electronic Components Datasheet

MMBV3700LT1 Datasheet

High Voltage Silicon Pin Diodes

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
High Voltage Silicon Pin Diodes
These devices are designed primarily for VHF band switching applications but are
also suitable for use in general–purpose switching circuits. They are supplied in a
cost–effective plastic package for economical, high–volume consumer and industrial
requirements. They are also available in surface mount.
Long Reverse Recovery Time
trr = 300 ns (Typ)
Rugged PIN Structure Coupled with Wirebond
Construction for Optimum Reliability
Low Series Resistance @ 100 MHz
RS = 0.7 Ohms (Typ) @ IF = 10 mAdc
Reverse Breakdown Voltage = 200 V (Min)
3
Cathode
SOT–23
1
Anode
2
Cathode
TO–92
1
Anode
MAXIMUM RATINGS
Rating
Symbol
MPN3700 MMBV3700LT1
Reverse Voltage
VR
200
Total Power Dissipation
PD
@ TA = 25°C
280
Derate above 25°C
2.8
200
2.0
Junction Temperature
Storage Temperature Range
DEVICE MARKING
TJ
Tstg
+125
–55 to +150
MMBV3700LT1 = 4R
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Breakdown Voltage
(IR = 10 µAdc)
Diode Capacitance
(VR = 20 Vdc, f = 1.0 MHz)
Series Resistance (Figure 5)
(IF = 10 mAdc)
Reverse Leakage Current
(VR = 150 Vdc)
Reverse Recovery Time
(IF = IR = 10 mAdc)
V(BR)R
CT
RS
IR
trr
Unit
Vdc
mW
mW/°C
°C
°C
Min
200
MMBV3700LT1
MPN3700
SILICON PIN
SWITCHING DIODES
3
1
2
CASE 318 – 08, STYLE 8
SOT– 23 (TO – 236AB)
1
2
CASE 182–02, STYLE 1
TO–92 (TO–226AC)
Typ Max Unit
— — Vdc
— 1.0 pF
0.7 1.0
— 0.1 µAdc
300 —
ns
5–142
Motorola Small–Signal Transistors, FETs and Diodes Device Data


Motorola Electronic Components Datasheet

MMBV3700LT1 Datasheet

High Voltage Silicon Pin Diodes

No Preview Available !

MMBV3700LT1 MPN3700
TYPICAL CHARACTERISTICS
3.2 800
2.8 700
TA = 25°C
2.4 600
2.0 500
1.6 400 TA = 25°C
1.2 300
0.8 200
0.4
0
0 2.0 4.0 6.0 8.0 10 12 14 16
IF, FORWARD CURRENT (mA)
Figure 1. Series Resistance
100
0
0.7 0.8 0.9 1.0
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
10
8.0
6.0
4.0
2.0 TA = 25°C
1.0
0.8
0.6
0.4
0.2
0.1
0 –10 –20 –30 –40 –50
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
100
40
10
4.0
1.0
0.4
0.1
0.04
0.01
0.004
0.001
–60
VR = 15 Vdc
–20 0 +20
+60 +100
TA, AMBIENT TEMPERATURE (°C)
Figure 4. Leakage Current
+140
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5–143


Part Number MMBV3700LT1
Description High Voltage Silicon Pin Diodes
Maker Motorola
Total Page 2 Pages
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