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Motorola Electronic Components Datasheet

MMBV809LT1 Datasheet

Silicon Tuning Diode

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Tuning Diode
This device is designed for 900 MHz frequency control and tuning applications. It
provides solid–state reliability in replacement of mechanical tuning methods.
Controlled and Uniform Tuning Ratio
Available in Surface Mount Package
Available in 8 mm Tape and Reel
1
ANODE
3
CATHODE
MMBV809LT1
Motorola Preferred Device
4.5–6.1 pF
VOLTAGE VARIABLE
CAPACITANCE DIODE
3
MAXIMUM RATINGS
Rating
Symbol
Value
Reverse Voltage
Forward Current
Total Power Dissipation(1) @ TA = 25°C
Derate above 25°C
VR
IF
PD
20
20
225
1.8
Junction Temperature
Storage Temperature Range
1. FR5 Board 1.0 x 0.75 x 0.62 in.
TJ +125
Tstg – 55 to +125
DEVICE MARKING
MMBV809LT1 = 5K
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic – All Types
Reverse Breakdown Voltage
(IR = 10 µAdc)
Reverse Voltage Leakage Current
(VR = 15 Vdc)
Unit
Vdc
mAdc
mW
mW/°C
°C
°C
Symbol
V(BR)R
IR
1
2
CASE 318 – 08, STYLE 8
SOT– 23 (TO – 236AB)
Min Typ Max Unit
20 — — Vdc
— — 50 nAdc
Ct, Diode Capacitance
VR = 2.0 Vdc, f = 1.0 MHz
pF
Device
Min Typ Max
MMBV809LT1
4.5 5.3 6.1
2. CR is the ratio of Ct measured at 2.0 Vdc divided by Ct measured at 8.0 Vdc.
Q, Figure of Merit
VR = 3.0 Vdc
f = 500 MHz
Typ
75
CR, Capacitance Ratio
C2/C8
f = 1.0 MHz(2)
Min Max
1.8 2.6
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5–133


Motorola Electronic Components Datasheet

MMBV809LT1 Datasheet

Silicon Tuning Diode

No Preview Available !

MMBV809LT1
TYPICAL CHARACTERISTICS
10
9
8
7
6
5
4
3
2
1
0
0.5 1
2 3 45
8 10 15
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
1000
100
10
0.1
VR = 3 Vdc
TA = 25°C
1.0
f, FREQUENCY (GHz)
Figure 2. Figure of Merit
10
1000
VR = 3.0 Vdc
f = 1.0 MHz
800
600
400
0 0.2 0.4 0.6 0.8 1.0 1.2
f, FREQUENCY (GHz)
Figure 3. Series Resistance
1.04
1.03
VR = 3.0 Vdc
f = 1.0 MHz
1.02
1.01
1.00
0.99
0.98
0.97
0.96
–75 –50 –25
0 +25 +50 +75 +100 +125
TA, AMBIENT TEMPERATURE (°C)
Figure 4. Diode Capacitance
5–134
Motorola Small–Signal Transistors, FETs and Diodes Device Data


Part Number MMBV809LT1
Description Silicon Tuning Diode
Maker Motorola
Total Page 2 Pages
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