Full PDF Text Transcription for MMFT6661T1 (Reference)
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MMFT6661T1. For precise diagrams, and layout, please refer to the original PDF.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power f...
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e Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as switching regulators, dc–dc converters, solenoid and relay drivers. The device is housed in the SOT–223 package which is designed for medium power surface mount applications. • Silicon Gate for Fast Switching Speeds • RDS(on) = 4.0 Ohm Max • Low Drive Requirement, VGS = 2.0 Volts Max • The SOT–223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering eliminating the possibility of damage to the die.
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MMFT6661T1 Datasheet
