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Motorola Electronic Components Datasheet

MMSD914T1 Datasheet

Switching Diode

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Switching Diode
The switching diode has the following features:
SOD–123 Surface Mount Package
High Breakdown Voltage
Fast Speed Switching Time
1
Cathode
MMSD914T1
Motorola Preferred Device
2
Anode
2
1
CASE 425–04, STYLE 1
SOD–123
MAXIMUM RATINGS
Rating
Symbol
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
DEVICE MARKING
VR
IF
IFM(surge)
MMSD914T1 = 5D
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate(2) TA = 25°C
Derate above 25°C
RqJA
PD
Thermal Resistance Junction to Ambient
RqJA
Junction and Storage Temperature
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IBR = 100 µAdc)
Reverse Voltage Leakage Current (VR = 20 Vdc)
(VR = 75 Vdc)
V(BR)
IR
Forward Voltage (IF = 10 mAdc)
Diode Capacitance (VR = 0 Vdc, f = 1.0 MHz)
Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
VF
CD
trr
Value
100
200
500
Max
225
1.8
556
300
2.4
417
– 55 to +150
Min Max
100 —
— 25
— 5.0
— 1000
— 4.0
— 4.0
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Unit
Vdc
nAdc
mAdc
mVdc
pF
ns
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5–147


Motorola Electronic Components Datasheet

MMSD914T1 Datasheet

Switching Diode

No Preview Available !

MMSD914T1
+10 V
820
2k
100 µH
0.1 µF
IF
0.1 µF
tr tp
10%
t
IF
trr t
50 OUTPUT
PULSE
GENERATOR
DUT
50 INPUT
90%
SAMPLING
OSCILLOSCOPE
VR
INPUT SIGNAL
iR(REC) = 1 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 kvariable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
100 10
10
TA = 85°C
1.0
TA = – 40°C
TA = 25°C
1.0
0.1
0.01
0.1 0.001
0.2 0.4 0.6 0.8 1.0 1.2
0
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
10 20 30 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
50
0.68
0.64
0.60
0.56
0.52
0
2 46
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
8
5–148
Motorola Small–Signal Transistors, FETs and Diodes Device Data


Part Number MMSD914T1
Description Switching Diode
Maker Motorola
Total Page 2 Pages
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