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MPF6661 - TMOS SWITCHING TRANSISTORS

This page provides the datasheet information for the MPF6661, a member of the MPF6659 TMOS SWITCHING TRANSISTORS family.

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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPF6659/D TMOS FET Transistors N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol MPF6659 MPF6660 MPF6661 Unit Drain – Source Voltage VDS 35 60 90 Vdc Drain – Gate Voltage VDG 35 60 90 Vdc Gate–Source Voltage — Continuous VGS ± 20 Vdc — Non–repetitive (tp ≤ 50 µs) VGSM ± 40 Vpk Drain Current Adc Continuous(1) ID 2.0 Pulsed(2) IDM 3.0 Total Device Dissipation @ TC = 25°C Derate above 25°C PD 2.5 Watts 20 mW/°C Total Device Dissipation @ TA = 25°C Derate above 25°C PD 1.0 Watts 8.
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