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Motorola Electronic Components Datasheet

MPQ3467 Datasheet

Quad Memory Driver Transistor

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Quad Memory Driver
Transistor
PNP Silicon
14 13 12 11 10 9 8
PNP
1234567
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
VCEO
VCBO
VEBO
IC
–40
–40
–5.0
–1.0
Each
Transistor
Four
Transistors
Equal Power
Vdc
Vdc
Vdc
Adc
Total Device Dissipation
@ TA = 25°C(1)
Derate above 25°C
PD
650
5.2
1500
12
mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1.25
10
3.2 Watts
25.6 mW/°C
Operating and Storage Junction TJ, Tstg
Temperature Range
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
RqJC
Junction
to Case
RqJA
Junction
to Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
100 193 °C/W
39 83.2 °C/W
Coupling Factors
Q1–Q4 or Q2–Q3
45
55 %
Q1–Q2 or Q3–Q4
5.0
10
%
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = –10 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = –3.0 Vdc, IC = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
–40
–40
–5.0
v v1. Second Breakdown occurs at power levels greater than 2 times the power dissipation rating.
2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
MPQ3467
Motorola Preferred Device
14
1
CASE 646–06, STYLE 1
TO–116
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
–200
nAdc
–200
nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–479


Motorola Electronic Components Datasheet

MPQ3467 Datasheet

Quad Memory Driver Transistor

No Preview Available !

MPQ3467
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS
DC Current Gain(2)
(IC = –500 mAdc, VCE = –1.0 Vdc)
Collector – Emitter Saturation Voltage(2)
(IC = –500 mAdc, IB = –50 mAdc)
Base – Emitter Saturation Voltage(2)
(IC = –500 mAdc, IB = –50 mAdc)
hFE
VCE(sat)
VBE(sat)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –50 mAdc, VCE = –10 Vdc, f = 100 MHz)
fT
Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)
Cobo
Cibo
SWITCHING CHARACTERISTICS
Turn–On Time
(IC = –500 mAdc, IB1 = –50 mAdc)
ton
Turn–Off Time
(IC = –500 mAdc, IB1 = IB2 = –50 mAdc)
v v2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
toff
Min Typ Max
–20 —
–0.23
–0.5
–0.90
–1.2
125 190
— 10
— 55
——
——
25
80
40
90
Unit
Vdc
Vdc
MHz
pF
pF
ns
ns
2–480
Motorola Small–Signal Transistors, FETs and Diodes Device Data


Part Number MPQ3467
Description Quad Memory Driver Transistor
Maker Motorola
Total Page 3 Pages
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