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Motorola Electronic Components Datasheet

MPQ3725 Datasheet

Quad Core Driver Transistor

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Quad Core Driver Transistor
NPN Silicon
14 13 12 11 10 9 8
NPN
1234567
MPQ3725
Motorola Preferred Device
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current — Continuous
VCEO
VCES
VEBO
IC
40
60
5.0
1.0
One
Transistor
Four
Transistors
Equal Power
Vdc
Vdc
Vdc
Adc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
1.0
8.0
2.5 Watts
20 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Effective
One For Four
Transistor Transistors
Thermal Resistance,
Junction to Ambient(1)
RqJA
125
50 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = 10 mAdc, IB = 0)
Collector – Emitter Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
v v1. RqJA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
Min
40
60
5.0
14
1
CASE 646–06, STYLE 1
TO–116
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
— 0.5 mAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
2–482
Motorola Small–Signal Transistors, FETs and Diodes Device Data


Motorola Electronic Components Datasheet

MPQ3725 Datasheet

Quad Core Driver Transistor

No Preview Available !

MPQ3725
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS(2)
Symbol
Min Typ Max Unit
DC Current Gain
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
hFE —
35 75 200
25 45 —
Collector – Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat) — 0.32 0.45 Vdc
Base – Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
0.8
0.9
1.1 Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT 250 275 — MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cobo
Cibo
— 5.1 10 pF
— 62 80 pF
SWITCHING CHARACTERISTICS
Turn–On Time
(IC = 500 mAdc, IB1 = 50 mAdc
VBE(off) = –3.8 Vdc)
ton — 20 35 ns
Turn–Off Time
(IC = 500 mAdc, IB1 = IB2 = 50 mAdc)
v v2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
toff — 50 60 ns
+9.7 V
0
PULSE GENERATOR
mtr, tf 1.0 ns
PW 1.0 s
Zin = 50 W
DUTY CYCLE 2.0%
–3.8 V
1.0 k
1.0 mF 100
+30 V
15 1.0 mF
TO
SAMPLING
43 OSCILLOSCOPE
WZin 100 k
tr < 1.0 ns
62
Figure 1. Switching Times Test Circuit
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–483


Part Number MPQ3725
Description Quad Core Driver Transistor
Maker Motorola
Total Page 4 Pages
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