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Motorola Electronic Components Datasheet

MPQ3762 Datasheet

Quad Memory Driver Transistor

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Quad Memory Driver
Transistor
PNP Silicon
14 13 12 11 10 9 8
PNP
1234567
MPQ3762
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
VCEO
VCBO
VEBO
IC
–40
–40
–5.0
–1.5
Each
Transistor
Four
Transistors
Equal Power
Vdc
Vdc
Vdc
Adc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
750
5.98
1700
13.6
mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1.25
10
3.2 Watts
25.6 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance(1)
Each Die
Effective, 4 Die
Junction
to Case
100
39
Junction
to Ambient
167
73.5
Unit
°C/W
°C/W
Coupling Factors
Q1–Q4 or Q2–Q3
Q1–Q2 or Q3–Q4
46
5.0
56
10
%
%
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = –10 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = –3.0 Vdc, IC = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
v v1. RqJA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
Min
–40
–40
–5.0
14
1
CASE 646–06, STYLE 1
TO–116
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
–100
nAdc
–100
nAdc
2–486
Motorola Small–Signal Transistors, FETs and Diodes Device Data


Motorola Electronic Components Datasheet

MPQ3762 Datasheet

Quad Memory Driver Transistor

No Preview Available !

MPQ3762
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS(2)
Symbol
Min Typ Max Unit
DC Current Gain
(IC = –150 mAdc, VCE = –1.0 Vdc)
(IC = –500 mAdc, VCE = –2.0 Vdc)
(IC = –1.0 Adc, VCE = –2.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = –500 mAdc, IB = –50 mAdc)
(IC = –1.0 Adc, IB = –100 mAdc)
hFE
VCE(sat)
35 70 —
30 65 —
20 35 —
Vdc
— –0.3 –0.55
— –0.6 –0.9
Base – Emitter Saturation Voltage
(IC = –500 mAdc, IB = –50 mAdc)
(IC = –1.0 Adc, IB = –100 mAdc)
VBE(sat)
Vdc
— –0.9 –1.25
— –1.0 –1.4
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(2)
(IC = –50 mAdc, VCE = –10 Vdc, f = 100 MHz)
fT
150 275
— MHz
Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)
Cobo
Cibo
— 9.0 15 pF
— 55 80 pF
SWITCHING CHARACTERISTICS
Turn–On Time
(VCC = –30 Vdc, IC = –1.0 Adc, IB1 = –100 mAdc, VBE(off) = 2.0 Vdc)
ton
— — 50 ns
Turn–Off Time
(VCC = –30 Vdc, IC = –1.0 Adc, IB1 = IB2 = –100 mAdc)
v v2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
toff — — 120 ns
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–487


Part Number MPQ3762
Description Quad Memory Driver Transistor
Maker Motorola
Total Page 3 Pages
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