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Motorola Electronic Components Datasheet

MPQ3798 Datasheet

Quad Amplifier Transistor

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Quad Amplifier Transistors
PNP Silicon
14 13 12 11 10 9 8
PNP
1234567
MAXIMUM RATINGS
Rating
Symbol
MPQ3798
MPQ3799
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
VCEO
VCBO
VEBO
IC
–40 –60
–60
–5.0
–50
Each
Transistor
Four
Transistors
Equal Power
Vdc
Vdc
Vdc
mAdc
Total Device Dissipation
@ TA = 25°C(1)
Derate above 25°C
PD
0.5
4.0
0.9 Watts
7.2 mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
0.825
6.7
2.4 Watts
19.2 m/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
RqJC
Junction
to Case
RqJA
Junction
to Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
151 250 °C/W
52 139 °C/W
Coupling Factors
Q1–Q4 or Q2–Q3
Q1–Q2 or Q3–Q4
34
2.0
70 %
26 %
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = –10 mAdc, IB = 0)
MPQ3798
MPQ3799
V(BR)CEO
–40
–60
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = –50 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = –3.0 Vdc, IC = 0)
V(BR)CBO
V(BR)EBO
ICBO
IEBO
–60
–5.0
v v1. Second breakdown occurs at power levels greater than 3 times the power dissipation rating.
2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
MPQ3798
MPQ3799*
*Motorola Preferred Device
14
1
CASE 646–06, STYLE 1
TO–116
Typ Max Unit
Vdc
——
——
— — Vdc
— — Vdc
— –10 nAdc
— –20 nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–489


Motorola Electronic Components Datasheet

MPQ3798 Datasheet

Quad Amplifier Transistor

No Preview Available !

MPQ3798 MPQ3799
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS
DC Current Gain
(IC = –10 mAdc, VCE = –5.0 Vdc)
MPQ3798
MPQ3799
hFE
(IC = –100 mAdc, VCE = –5.0 Vdc)
MPQ3798
MPQ3799
(IC = –500 mAdc, VCE = –5.0 Vdc)
MPQ3798
MPQ3799
(IC = –10 mAdc, VCE = –5.0 Vdc)
MPQ3798
MPQ3799
Collector – Emitter Saturation Voltage
(IC = –100 mAdc, IB = –10 mAdc)
(IC = –1.0 mAdc, IB = –100 mAdc)
Base – Emitter Saturation Voltage
(IC = –100 mAdc, IB = –10 mAdc)
(IC = –1.0 mAdc, IB = –100 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –1.0 mAdc, VCE = –5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)
Noise Figure
(IC = –100 mAdc, VCE = –10 Vdc, RS = 3.0 k ohms,
f = 1.0 kHz)
MPQ3798
MPQ3799
VCE(sat)
VBE(sat)
fT
Cobo
Cibo
NF
Min Typ Max Unit
100 —
225 —
150 —
300 —
150 —
300 —
125 —
250 —
Vdc
–0.12
–0.2
–0.07
–0.25
Vdc
–0.62
–0.7
–0.68
–0.8
60 250 — MHz
— 2.1 4.0 pF
— 5.5 8.0 pF
dB
— 2.5 —
— 1.5 —
2–490
Motorola Small–Signal Transistors, FETs and Diodes Device Data


Part Number MPQ3798
Description Quad Amplifier Transistor
Maker Motorola
Total Page 3 Pages
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