MPSA13 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSA13/D Darlington Transistors NPN Silicon COLLECTOR 3 MPSA13 MPSA14 - - Motorola Preferred Device BASE 2 EMITTER 1 1 2 3 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg Value 30 30 10 500 625 5.0 1.5 12 - 55 to +150 Unit Vdc Vdc Vdc m Adc m W m W/°C Watts m W/°C °C CASE 29- 04, STYLE 1 TO- 92 (TO- 226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol Rq JA Rq JC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 100 µAdc, IB = 0) Collector Cutoff Current (VCB= 30 Vdc, IE = 0) Emitter Cutoff Current (VEB= 10 Vdc, IC = 0) V(BR)CES ICBO IEBO 30 - - - 100 100 Vdc n Adc n Adc Preferred devices are Motorola remended choices for future use and best overall value. Motorola Small- Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 MPSA13 MPSA14 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(1) DC Current Gain (IC = 10 m Adc, VCE = 5.0 Vdc) h FE MPSA13 MPSA14 MPSA13 MPSA14 VCE(sat) VBE(on) 5,000 10,000 10,000 20,000 - - - - - - 1.5 2.0 Vdc Vdc - (IC = 100 m Adc, VCE = 5.0 Vdc)...