MPSA25
MPSA26
MPSA27
CASE 29-02, STYLE 1
TO-92 (TO-226AA)
DARLINGTON TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation
@ Ta = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol MPS-A25 MPS-A26 MPS-A27 Unit
VCE$
40
50
60 Vdc
vEBO
10
Vdc
'C 500 mAdc
PD 625 mW
5.0 mW/°C
Tj. TSt g
-55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Symbol
R 0JA
Max
200
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
C(l = 100 AiAdc, V BE = 0)
MPSA25
MPSA26
MPSA27
Collector-Base Breakdown Voltage
(lC = 100 fiAdc, El = 0)
MPSA25
MPSA26
MPSA27
Collector Cutoff Current
(Vcb = 30 V, l£ = 0)
(Vcb = 40 V, Ie = 0)
(Vcb = 50 V, El = 0)
Collector Cutoff Current
(Vce = 30 V, V B E = 0)
(Vce = 40 V, V B e = 0)
(VC e = 50 V, V B e = 0)
Emitter Cutoff Current
(Vbe = 10 Vdc)
ON CHARACTERISTICS)!)
MPSA25
MPSA26
MPSA27
MPSA25
MPSA26
MPSA27
DC Current Gain
(lC = 10 mA, Vce = 5.0 V)
(lC = 100 mA, Vce = 5.0 V)
Collector-Emitter Saturation Voltage
Oc = 100 mA, Ib = 0.1 mAdc)
Base-Emitter On Voltage
dc = 100 mA, Vce = 50 Vdc >
SMALL-SIGNAL CHARACTERISTICS
Small Signal Current Gain
(lC
=
10 mA, Vce
=
50
v
'
f
=
10 °
MHz
>
(1) Pulse Test: Pulse Width =£ 300 /xs, Duty Cycle =s 2.0%.
Symbol
Min
V(BR)CES
V(BR)CBO
'CBO
40
50
60
40
50
60
-
Ices
Iebo
-
—
Typ
-
-
-
-
—
hFE
v CE(sat)
v BE(on)
10,000
10,000
—
—
-
~
—
hfe
1.25
2.4
Max
Unit
- Vdc
Vdc
-
nAdc
100
100
100
nAdc
500
500
500
100 nAdc
—
-
1.5 Vdc
2.0 Vdc
—-
2-226
