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MPSH54 MPSH55
CASE 29-02, STYLE 1
TO-92 (TO-226AA)
AMPLIFIER TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
Total Device Dissipation Tq(ffi = 25°C Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol vCEO VEBO
'C
PD
Pd
TJ- Tstg
Value 80 4.0 100 625
5.0
1.5 12
-55 to +150
Unit
Vdc
Vdc mAdc
mW
mW/°C
Watt mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
P-0JC
83.3
°C/W
Thermal Resistance, Junction to Ambient RwaH)
200
°c/w
< 1 ) R&JA is measured with the device soldered into a typical printed circuit board
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
MPSH55 Datasheet
