Datasheet4U Logo Datasheet4U.com

MPSH81 - RF Amplifier Transistor

📥 Download Datasheet

Datasheet preview – MPSH81

📁 Similar Datasheet

  • MPSH81 - PNP RF Transistor (Fairchild Semiconductor)
  • MPSH81 - PNP SILICON RF TRANSISTOR (Central Semiconductor)
  • MPSH10 - NPN RF TRANSISTORS (Central Semiconductor)
  • MPSH10 - NPN 1 GHz general purpose switching transistor (NXP)
  • MPSH10 - NPN RF Transistor (Fairchild Semiconductor)
  • MPSH10 - NPN Silicon Planar Epitaxial Transistor (CDIL)
  • MPSH10 - NPN Transistor (ON Semiconductor)
  • MPSH10 - RF TRANSISTOR (UTC)
  • MPSH10 - Silicon NPN Transistor (NTE)
  • MPSH10A - RF TRANSISTOR (UTC)
Other Datasheets by Motorola
  • MPSH04 - AMPLIFIER TRANSISTOR
  • MPSH05 - AMPLIFIER TRANSISTOR
  • MPSH10 - (MPSH10 / MPSH11) VHF/UHF Transistors
  • MPSH11 - (MPSH10 / MPSH11) VHF/UHF Transistors
  • MPSH17 - CATV Transistor
  • MPSH24 - VHF Transistor
  • MPSH34 - IF TRANSISTOR
  • MPSH54 - AMPLIFIER TRANSISTOR

Full PDF Text Transcription

Click to expand full text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF Amplifier Transistor PNP Silicon COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO PD –20 Vdc –20 Vdc –3.0 Vdc 350 mW 2.81 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 357 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic °C/W Symbol OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –1.
Published: |