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Motorola Electronic Components Datasheet

MPSH81 Datasheet

RF Amplifier Transistor

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
RF Amplifier Transistor
PNP Silicon
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
PD
–20 Vdc
–20 Vdc
–3.0 Vdc
350 mW
2.81 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
357
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = –10 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = –2.0 Vdc, IC = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
Min
–20
–20
–3.0
MPSH81
Motorola Preferred Device
1
23
CASE 29–04, STYLE 2
TO–92 (TO–226AA)
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
–100
nAdc
–100
nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–673


Motorola Electronic Components Datasheet

MPSH81 Datasheet

RF Amplifier Transistor

No Preview Available !

MPSH81
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –5.0 mAdc, VCE = –10 Vdc)
hFE 60 — — —
Collector – Emitter Saturation Voltage
(IC = –5.0 mAdc, IB = –0.5 mAdc)
VCE(sat)
— –0.5 Vdc
Base– Emitter On Voltage
(IC = –5.0 mAdc, VCE = –10 Vdc)
VBE(on)
— –0.9 Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –5.0 mAdc, VCE = –10 Vdc, f = 100 MHz)
fT 600 — — MHz
Collector–Base Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Ccb — — 0.85 pF
Collector–Emitter Capacitance
(IB = 0, VCB = –10 Vdc, f = 1.0 MHz)
Cce — — 0.65 pF
2–674
Motorola Small–Signal Transistors, FETs and Diodes Device Data


Part Number MPSH81
Description RF Amplifier Transistor
Maker Motorola
Total Page 3 Pages
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