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MRF1047T1 - NPN Silicon Low Noise Transistor

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www.DataSheet4U.com Order this document by MRF1047T1/D NPN Silicon Low Noise Transistor The MRF1047T1 is fabricated utilizing Motorola’s latest 12 GHz fτ discrete bipolar silicon process. The minimum noise figure is 1.0 dB at VCE = 3.0 V and IC = 3.0 mA. The noise performance of the MRF1047T1 at low bias makes this device the ideal choice in high gain, low noise applications. This device is well suited for low–voltage, low–current, front–end applications, for use in pagers, cellular and cordless phones, and other portable wireless systems. The MRF1047T1 has 16 emitter fingers, with self–aligned and enhanced processing, resulting in a high fτ, low operating current transistor with reduced parasitics.
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