Motorola Electronic Components Datasheet

MRF1047T1 Datasheet

NPN Silicon Low Noise Transistor

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NPN Silicon

Low Noise Transistor

The MRF1047T1 is fabricated utilizing Motorola’s latest 12 GHz fτ discrete

bipolar silicon process. The minimum noise figure is 1.0 dB at VCE = 3.0 V and

IC = 3.0 mA. The noise performance of the MRF1047T1 at low bias makes

this device the ideal choice in high gain, low noise applications. This device

is well suited for low–voltage, low–current, front–end applications, for use in

pagers, cellular and cordless phones, and other portable wireless systems.

The MRF1047T1 has 16 emitter fingers, with self–aligned and enhanced

processing, resulting in a high fτ, low operating current transistor with

reduced parasitics. The MRF1047T1 is fully–ion implanted with gold

metallization and nitride passivation for maximum device r

eliability, performance and uniformity.

• Low Noise Figure, NFmin = 1.0 dB (Typ) @1.0 GHz, 3.0 V and 3.0 mA

• High Current Gain–Bandwidth Product, fτ = 12 GHz, 3.0 V @ 15 mA

• Maximum Stable Gain, 17 dB @ 1.0 GHz, 3.0 V and 10 mA

• Output Third Order Intercept, OIP3 = 26 dBm @ 1.0 GHz 3.0 V

and 15 mA

• Fully Ion–Implanted with Gold Metallization and Nitride Passivation

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current – Continuous [Note 3]

Power Dissipation @ TC = 75°C

Derate Linearly above TC = 75°C at

Storage Temperature Range

Maximum Junction Temperature

VCEO

VCBO

VEBO

PD(max)

Tstg

TJ(max)

5.0 Vdc

12 Vdc

2.5 Vdc

45 mAdc

0.172

2.3

–55 to 150

mW/°C

°C

150 °C

NOTES: 1. Meets Human Body Model (HBM) ≤300 V and Machine Model (MM) ≤75 V.

2. ESD data available upon request.

3. For MTBF >10 years.

THERMAL CHARACTERISTIC

Characteristics

Symbol

Max

Thermal Resistance, Junction–to–Case

RθJC

435

NOTE: To calculate the junction temperature use TJ = (PD x RθJC) + TC. The case

temperature measured on collector lead adjacent to the package body.

Unit

°C/W

MRF1047T1

RF NPN

SILICON TRANSISTOR

fτ = 12 GHz

NFmin = 1.0 dB

ICMAX = 45 mA

VCEO = 5.0 V

SEMICONDUCTOR

TECHNICAL DATA

Pin 1. Base

2. Emitter

3. Collector

PLASTIC PACKAGE

CASE 419

(SC–70, Tape & Reel Only)

ORDERING INFORMATION

Device

Marking

Package

MRF1047T1

WB SC–70

Tape & Reel*

*3,000 Units per 8 mm, 7 inch reel.

MOTOROLA RF PRODUCTS DEVICE DATA

Rev 3

Motorola Electronic Components Datasheet

MRF1047T1 Datasheet

NPN Silicon Low Noise Transistor

No Preview Available !

MRF1047T1

ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max Unit

OFF CHARACTERISTICS [Note 1]

Collector–Emitter Breakdown Voltage (IC = 0.1 mA, IB = 0)

V(BR)CEO

5.0

–

– Vdc

Collector–Base Breakdown Voltage (IC = 0.1 mA, IE = 0)

V(BR)CBO

–

– Vdc

Emitter–Base Breakdown Voltage (IE = 0.1 mA, IC = 0)

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁCollector Cutoff Current (VCB =1.0 V, IE = 0)

V(BR)CBO

2.5

–

– Vdc

ICBO – – 0.2 µA

Emitter Cutoff Current (VEB = 1.0 V, IC = 0)

IEBO – – 0.1 µA

ON CHARACTERISTICS [Note 1]

DC Current Gain (VCE = 3.0 V, IC = 3.0 mA)

hFE 100 – 300 –

DYNAMIC CHARACTERISTICS

Collector–Base Capacitance (VCB = 1.0 Vdc, IE = 0, f = 1.0 MHz)

Ccb – 0.4 – pF

Current–Gain Bandwidth Product (VCE = 3.0 Vdc, IC = 15 mA, f = 1.0 GHz)

fτ

– 12 – GHz

PERFORMANCE CHARACTERISTICS

Insertion Gain

VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz

VCE = 3.0 V, IC = 3.0 mA, f = 1.0 GHz

|S21|2

– 8.0 –

– 13 –

Maximum Stable Gain and/or Maximum Available Gain [Note 2]

VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz

VCE = 3.0 V, IC = 3.0 mA, f = 1.0 GHz

MSG, MAG

– 11 –

– 16 –

Minimum Noise Figure

VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz

VCE = 3.0 V, IC = 3.0 mA, f = 1.0 GHz

NFmin

– 1.2 –

– 1.0 –

Associated Gain at Minimum NF

VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz

VCE = 3.0 V, IC = 3.0 mA, f = 1.0 GHz

GNF

– 10 –

– 13 –

Output Power at 1.0 dB Gain Compression [Note 3] (VCE = 3.0 V,

IC = 3.0 mA, f = 1.0 GHz)

P1dB

– 0.5 – dBm

Output Third Order Intercept [Note 3] (VCE = 3.0 V, IC = 3.0 mA,

f = 1.0 GHz)

OIP3 – 22 – dBm

NOTES: 1. Pulse width ≤300 µs, duty cycle ≤2% pulsed.

2. Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows:

| ǒ Ǔ|, | |MAG +

S21

S12

K " ǸK2 * 1

if K u 1, MSG +

S21

S12

, if K

3. Zin = 50 Ω and Zout matched for optimum IP3.

2 MOTOROLA RF PRODUCTS DEVICE DATA

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MRF1047T1 Datasheet

NPN Silicon Low Noise Transistor

MRF1047T1 Datasheet

NPN Silicon Low Noise Transistor

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