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MRF1047T1 Datasheet

NPN Silicon Low Noise Transistor

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NPN Silicon
Low Noise Transistor
The MRF1047T1 is fabricated utilizing Motorola’s latest 12 GHz fτ discrete
bipolar silicon process. The minimum noise figure is 1.0 dB at VCE = 3.0 V and
IC = 3.0 mA. The noise performance of the MRF1047T1 at low bias makes
this device the ideal choice in high gain, low noise applications. This device
is well suited for low–voltage, low–current, front–end applications, for use in
pagers, cellular and cordless phones, and other portable wireless systems.
The MRF1047T1 has 16 emitter fingers, with self–aligned and enhanced
processing, resulting in a high fτ, low operating current transistor with
reduced parasitics. The MRF1047T1 is fully–ion implanted with gold
metallization and nitride passivation for maximum device r
eliability, performance and uniformity.
Low Noise Figure, NFmin = 1.0 dB (Typ) @1.0 GHz, 3.0 V and 3.0 mA
High Current Gain–Bandwidth Product, fτ = 12 GHz, 3.0 V @ 15 mA
Maximum Stable Gain, 17 dB @ 1.0 GHz, 3.0 V and 10 mA
Output Third Order Intercept, OIP3 = 26 dBm @ 1.0 GHz 3.0 V
and 15 mA
Fully Ion–Implanted with Gold Metallization and Nitride Passivation
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current – Continuous [Note 3]
Power Dissipation @ TC = 75°C
Derate Linearly above TC = 75°C at
Storage Temperature Range
Maximum Junction Temperature
VCEO
VCBO
VEBO
IC
PD(max)
Tstg
TJ(max)
5.0 Vdc
12 Vdc
2.5 Vdc
45 mAdc
0.172
2.3
–55 to 150
W
mW/°C
°C
150 °C
NOTES: 1. Meets Human Body Model (HBM) 300 V and Machine Model (MM) 75 V.
2. ESD data available upon request.
3. For MTBF >10 years.
THERMAL CHARACTERISTIC
Characteristics
Symbol
Max
Thermal Resistance, Junction–to–Case
RθJC
435
NOTE: To calculate the junction temperature use TJ = (PD x RθJC) + TC. The case
temperature measured on collector lead adjacent to the package body.
Unit
°C/W
MRF1047T1
RF NPN
SILICON TRANSISTOR
fτ = 12 GHz
NFmin = 1.0 dB
ICMAX = 45 mA
VCEO = 5.0 V
SEMICONDUCTOR
TECHNICAL DATA
Pin 1. Base
2. Emitter
3. Collector
3
1
2
PLASTIC PACKAGE
CASE 419
(SC–70, Tape & Reel Only)
ORDERING INFORMATION
Device
Marking
Package
MRF1047T1
WB SC–70
Tape & Reel*
*3,000 Units per 8 mm, 7 inch reel.
MOTOROLA RF PRODUCTS DEVICE DATA
© Motorola, Inc. 2001
Rev 3
1


Motorola Electronic Components Datasheet

MRF1047T1 Datasheet

NPN Silicon Low Noise Transistor

No Preview Available !

MRF1047T1
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS [Note 1]
Collector–Emitter Breakdown Voltage (IC = 0.1 mA, IB = 0)
V(BR)CEO
5.0
– Vdc
Collector–Base Breakdown Voltage (IC = 0.1 mA, IE = 0)
V(BR)CBO
12
– Vdc
Emitter–Base Breakdown Voltage (IE = 0.1 mA, IC = 0)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁCollector Cutoff Current (VCB =1.0 V, IE = 0)
V(BR)CBO
2.5
– Vdc
ICBO – – 0.2 µA
Emitter Cutoff Current (VEB = 1.0 V, IC = 0)
IEBO – – 0.1 µA
ON CHARACTERISTICS [Note 1]
DC Current Gain (VCE = 3.0 V, IC = 3.0 mA)
hFE 100 – 300 –
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance (VCB = 1.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb – 0.4 – pF
Current–Gain Bandwidth Product (VCE = 3.0 Vdc, IC = 15 mA, f = 1.0 GHz)
fτ
– 12 – GHz
PERFORMANCE CHARACTERISTICS
Insertion Gain
VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz
VCE = 3.0 V, IC = 3.0 mA, f = 1.0 GHz
|S21|2
dB
– 8.0 –
– 13 –
Maximum Stable Gain and/or Maximum Available Gain [Note 2]
VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz
VCE = 3.0 V, IC = 3.0 mA, f = 1.0 GHz
MSG, MAG
dB
– 11 –
– 16 –
Minimum Noise Figure
VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz
VCE = 3.0 V, IC = 3.0 mA, f = 1.0 GHz
NFmin
dB
– 1.2 –
– 1.0 –
Associated Gain at Minimum NF
VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz
VCE = 3.0 V, IC = 3.0 mA, f = 1.0 GHz
GNF
dB
– 10 –
– 13 –
Output Power at 1.0 dB Gain Compression [Note 3] (VCE = 3.0 V,
IC = 3.0 mA, f = 1.0 GHz)
P1dB
– 0.5 – dBm
Output Third Order Intercept [Note 3] (VCE = 3.0 V, IC = 3.0 mA,
f = 1.0 GHz)
OIP3 – 22 – dBm
NOTES: 1. Pulse width 300 µs, duty cycle 2% pulsed.
2. Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows:
| ǒ Ǔ|, | |MAG +
S21
S12
K " ǸK2 * 1
if K u 1, MSG +
S21
S12
, if K
t1
3. Zin = 50 and Zout matched for optimum IP3.
2 MOTOROLA RF PRODUCTS DEVICE DATA


Part Number MRF1047T1
Description NPN Silicon Low Noise Transistor
Maker Motorola
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