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MRF166 - MOSFET BROADBAND RF POWER FETs

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF166/D The RF MOSFET Line RF Power Field Effect Transistors • Low Crss — 4.5 pF @ VDS = 28 V N–Channel Enhancement Mode MOSFETs Designed primarily for wideband large–signal output and driver from 30 – 500 MHz.
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