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MRF166W - TMOS BROADBAND RF POWER FET

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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF166W/D The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET • Push–Pull Configuration Reduces Even Numbered Harmonics • Typical Performance at 400 MHz, 28 Vdc Output Power = 40 Watts Gain = 13 dB Efficiency = 50% • Typical Performance at 175 MHz, 28 Vdc Output Power = 40 Watts Gain = 17 dB Efficiency = 60% • Excellent Thermal Stability, Ideally Suited for Class A Operation • Facilitates Manual Gain Control, ALC and Modulation Techniques • 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR • Low Crss — 4.5 pF @ VDS = 28 Volts • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
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