MRF175LU Datasheet PDF - Motorola N-CHANNEL BROADBAND RF POWER FET Specs

MRF175LU - N-CHANNEL BROADBAND RF POWER FET

Datasheet Summary

Features

xceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination.
The gates of these devices are essentially capacitors. Circuits that leave the gate open.
circuited or floating should be avoided. These conditions can result in turn.
on of the devices due to voltage build.
up on the input capacitor due to leakage currents or pickup. SOURCE.

Datasheet Details

Part number	MRF175LU
Manufacturer	Motorola
File Size	138.89 KB
Description	N-CHANNEL BROADBAND RF POWER FET
Datasheet	MRF175LU Datasheet
Additional preview pages of the MRF175LU datasheet.

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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF175LU/D The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

Published: Dec 26, 2005 |