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MRF175LU N-CHANNEL BROADBAND RF POWER FET

MRF175LU Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF175LU/D The RF MOSFET Line RF Power Field-Effect Transistors N *Channel Enh.

MRF175LU Features

* xceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination
* The gates of these devices are essentially capacitors. Circuits that leave the gate open
* circuited or floating should be avoided. These cond

MRF175LU Applications

* using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
* Guaranteed Performance MRF175LU @ 28 V, 400 MHz (“U” Suffix) Output Power

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Datasheet Details

Part number
MRF175LU
Manufacturer
Motorola
File Size
138.89 KB
Datasheet
MRF175LU_Motorola.pdf
Description
N-CHANNEL BROADBAND RF POWER FET

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N-CHANNEL BROADBAND POWER FET Motorola
Motorola MRF175LU-like datasheet