MRF18030ALSR3 - RF Power Field Effect Transistors

This page provides the datasheet information for the MRF18030ALSR3, a member of the MRF18030ALR3 RF Power Field Effect Transistors family.

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Motorola Semiconductor (now NXP Semiconductors)

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Datasheet Details

Part number	MRF18030ALSR3
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	508.05 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF18030ALSR3 Datasheet
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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF18030A/D The RF MOSFET Line RF Power Field Effect Transistors MRF18030ALR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030ALSR3 Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1805 - 1880 MHz.

Published: Jan 2, 2006 |