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MRF18060AR3 - RF POWER FIELD EFFECT TRANSISTORS

This page provides the datasheet information for the MRF18060AR3, a member of the MRF18060A RF POWER FIELD EFFECT TRANSISTORS family.

Features

  • 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --1.02 --0.76 0.127 REF 0.254 REF 0.381 REF B (FLANGE) 2 2X K D bbb M T A M B M N (LID) R M (LID) ccc M H 3 T A M B M ccc aaa M T A T A M B B M (.

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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18060A/D MRF18060A RF Power Field Effect Transistors MRF18060AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from MRF18060ASR3 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier The RF MOSFET Line applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications. Specified for GSM1805 – 1880 MHz.
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