MRF18060BSR3 - RF Power Field Effect Transistors

This page provides the datasheet information for the MRF18060BSR3, a member of the MRF18060BR3 RF Power Field Effect Transistors family.

Features

PER ANSI Y14.5M.
1994. 2.

Motorola

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Datasheet Details

Part number	MRF18060BSR3
Manufacturer	Motorola
File Size	490.03 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF18060BSR3 Datasheet
Additional preview pages of the MRF18060BSR3 datasheet.

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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF18060B/D The RF MOSFET Line RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. Specified for GSM1930 - 1990 MHz.

Published: Jan 2, 2006 |