MRF18085AR3 RF Power Field Effect Transistor
MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18085A/D Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN PCS/cellular radio and WLL applications. Specified for GSM GSM EDGE 1805 1880 MHz. GSM and GSM EDGE Performance, Full Frequency Band (1805 1880 MHz) Power Gain .
MRF18085AR3 Features
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