Datasheet4U Logo Datasheet4U.com

MRF18090AS - LATERAL N-CHANNEL RF POWER MOSFETS

This page provides the datasheet information for the MRF18090AS, a member of the MRF18090A LATERAL N-CHANNEL RF POWER MOSFETS family.

Features

  • out limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different.

📥 Download Datasheet

Datasheet preview – MRF18090AS

📁 Similar Datasheet

  • MRF18090AR3 - RF Power Field Effect Transistor (Freescale Semiconductor)
  • MRF18090BR3 - LATERAL N-CHANNEL RF POWER MOSFETs (Freescale Semiconductor)
  • MRF18090BSR3 - LATERAL N-CHANNEL RF POWER MOSFETs (Freescale Semiconductor)
  • MRF18030BLR3 - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs (Freescale Semiconductor)
  • MRF18030BLSR3 - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs (Freescale Semiconductor)
  • MRF18060ALR3 - RF Power Field Effect Transistors (Freescale Semiconductor)
  • MRF18060BLR3 - RF Power Field Effect Transistor (NXP)
  • MRF18060BLSR3 - RF Power Field Effect Transistor (NXP)
  • MRF18085ALSR3 - RF Power Field Effect Transistors (Freescale Semiconductor)
  • MRF18085AR3 - RF Power Field Effect Transistors (Freescale Semiconductor)
Other Datasheets by Motorola

Full PDF Text Transcription

Click to expand full text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18090A/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for GSM and EDGE cellular radio applications. • GSM and EDGE Performances, Full Frequency Band Power Gain — 13.
Published: |