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MRF182S - LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

This page provides the datasheet information for the MRF182S, a member of the MRF182 LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs family.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF182/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances D MRF182 MRF182S 30 W, 1.0 GHz LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs G CASE 360B–01, STYLE 1 (MRF182) S CASE 360C–03, STYLE 1 (MRF182S) MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 70°C Derate above 70°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 ± 20 74 0.
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