MRF185 - LATERAL N-CHANNEL BROADBAND RF POWER MOSFET

Motorola Semiconductor (now NXP Semiconductors)

MRF185 LATERAL N-CHANNEL BROADBAND RF POWER MOSFET by Motorola - Datasheet Preview — Datasheet preview – MRF185

Datasheet Details

Part number	MRF185
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	56.66 KB
Description	LATERAL N-CHANNEL BROADBAND RF POWER MOSFET
Datasheet	MRF185 Datasheet
Additional preview pages of the MRF185 datasheet.

📁 Similar Datasheet

MRF18030BLR3 - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs (Freescale Semiconductor)
MRF18030BLSR3 - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs (Freescale Semiconductor)
MRF18060ALR3 - RF Power Field Effect Transistors (Freescale Semiconductor)
MRF18060BLR3 - RF Power Field Effect Transistor (NXP)
MRF18060BLSR3 - RF Power Field Effect Transistor (NXP)
MRF18085ALSR3 - RF Power Field Effect Transistors (Freescale Semiconductor)
MRF18085AR3 - RF Power Field Effect Transistors (Freescale Semiconductor)
MRF18090AR3 - RF Power Field Effect Transistor (Freescale Semiconductor)
MRF18090BR3 - LATERAL N-CHANNEL RF POWER MOSFETs (Freescale Semiconductor)
MRF18090BSR3 - LATERAL N-CHANNEL RF POWER MOSFETs (Freescale Semiconductor)

Other Datasheets by Motorola

MRF18030ALR3 - RF Power Field Effect Transistors
MRF18030ALSR3 - RF Power Field Effect Transistors
MRF18030BR3 - THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTOR
MRF18030BSR3 - THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTOR
MRF18060A - RF POWER FIELD EFFECT TRANSISTORS
MRF18060ALSR3 - RF POWER FIELD EFFECT TRANSISTORS
MRF18060AR3 - RF POWER FIELD EFFECT TRANSISTORS
MRF18060ASR3 - RF POWER FIELD EFFECT TRANSISTORS

Full PDF Text Transcription

Click to expand full text

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF185/D Advance Information The RF MOSFET Line MRF185 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N–CHANNEL BROADBAND RF POWER MOSFET RF POWER Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances D G G S (FLANGE) D CASE 375B–02, STYLE 2 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Storage Temperature Range Operating Junction Temperature Total Device Dissipation @ TC = 25°C Derate above 25°C Symbol VDSS VGS Tstg TJ PD Value 65 ± 20 – 65 to +150 200 250 1.

Published: Jan 2, 2006 |