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MRF207 - HIGH FREQUENCY TRANSISTOR

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MRF207 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation @TC = 25°C(1) Derate above 25°C vCEO 18 Vdc vCBO 36 Vdc v EBO 4.0 Vdc 'C 0.4 Adc PD 3.5 Watts 20 mW/°C Storage Temperature T stg - 65 to + 200 °C (1) This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. CASE 79-02, STYLE 1 TO-39 (TO-205AD) HIGH FREQUENCY TRANSISTOR NPN SILICON f ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.! Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, q = 0) Collector-Base Breakdown Voltage (IC = 2.
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