MRF21010LSR1, MRF21010LR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Motorola

MRF21010LSR1 Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.Order this document by MRF21010/D The RF MOSFET Line MRF21010LR1 RF Power Fie.
2.

MRF21010LSR1 Features

* .89 - j5.04 2.73 - j6.19 Zload Ω 2.93 - j1.71 2.76 - j2.28 2.83 - j2.59 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure

MRF21010LSR1 Applications

* with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
* Typical W - CDMA Performance: - 45 dBc ACPR, 2140 MHz, 28 Volts, 5 MHz Offset/4.096 MHz BW, 15 DTCH Output

📥 Download Datasheet

MRF21010LSR1 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF21010LSR1, MRF21010LR1. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRF21010LSR1, MRF21010LR1
Manufacturer: Motorola
File Size: 542.13 KB
Datasheet: MRF21010LR1_Motorola.pdf
Description: RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Note: This datasheet PDF includes multiple part numbers: MRF21010LSR1, MRF21010LR1.
Please refer to the document for exact specifications by model.

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Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Motorola

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