MRF21030R3 RF POWER FIELD EFFECT TRANSISTORS

Motorola

MRF21030R3 Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF21030/D The RF MOSFET Line RF Power Field Effect Transistors N *Channel Enh.

MRF21030R3 Features

* .057 .067 .092 .122 .395 .405 .395 .405 .395 .405 .395 .405 .005 REF .010 REF .015 REF MILLIMETERS MIN MAX 10.03 10.29 10.03 10.29 3.18 4.14 6.98 7.24 0.89 1.14 0.08 0.15 1.45 1.70 2.34 3.10 10.03 10.29 10.03 10.29 10.03 10.29 10.03 10.29 0.127 REF 0.254 REF 0.38 REF 2X K R ccc E M (LID) T A M B

MRF21030R3 Applications

* with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN
* PCS/cellular radio and WLL applications.
* Wideband CDMA Performance:
* 45 dB ACPR @ 4.096 MHz, 28 Volts Output Power
* 3.5 Watts P

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Datasheet Details

Part number: MRF21030R3
Manufacturer: Motorola
File Size: 377.53 KB
Datasheet: MRF21030R3_Motorola.pdf
Description: RF POWER FIELD EFFECT TRANSISTORS

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POWER FIELD EFFECT TRANSISTORS Motorola

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