MRF21030SR3, MRF21030R3 RF POWER FIELD EFFECT TRANSISTORS

Motorola

MRF21030SR3 Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF21030/D The RF MOSFET Line RF Power Field Effect Transistors N *Channel Enh.

MRF21030SR3 Features

* .057 .067 .092 .122 .395 .405 .395 .405 .395 .405 .395 .405 .005 REF .010 REF .015 REF MILLIMETERS MIN MAX 10.03 10.29 10.03 10.29 3.18 4.14 6.98 7.24 0.89 1.14 0.08 0.15 1.45 1.70 2.34 3.10 10.03 10.29 10.03 10.29 10.03 10.29 10.03 10.29 0.127 REF 0.254 REF 0.38 REF 2X K R ccc E M (LID) T A M B

MRF21030SR3 Applications

* with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN
* PCS/cellular radio and WLL applications.
* Wideband CDMA Performance:
* 45 dB ACPR @ 4.096 MHz, 28 Volts Output Power
* 3.5 Watts P

📥 Download Datasheet

MRF21030SR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF21030SR3, MRF21030R3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRF21030SR3, MRF21030R3
Manufacturer: Motorola
File Size: 377.53 KB
Datasheet: MRF21030R3_Motorola.pdf
Description: RF POWER FIELD EFFECT TRANSISTORS
Note: This datasheet PDF includes multiple part numbers: MRF21030SR3, MRF21030R3.
Please refer to the document for exact specifications by model.

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POWER FIELD EFFECT TRANSISTORS Motorola

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