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MRF21045LSR3 - RF Power Field Effect Transistors

This page provides the datasheet information for the MRF21045LSR3, a member of the MRF21045LR3 RF Power Field Effect Transistors family.

Description

Short Ferrite Bead, Fair Rite, #2743019447 43 pF Chip Capacitors, ATC #100B430JCA500X 5.6 pF Chip Capacitor, ATC #100B5R6JCA500X 1000 pF Chip Capacitors, ATC #100B102JCA500X 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS 1.0 mF Tantalum Chip Capacitor, Kemet #T491C105M050 10 mF Tantalum Chip Capacito

Features

  • 0 20 60 42 41 40 Figure 6. 2 - Carrier W - CDMA Broadband Performance.
  • 24 η.
  • 25.
  • 26 IMD 39 38 37 36 IDQ = 500 mA Pout = 45 W (PEP) f1 = 2135 MHz, f2 = 2145 MHz 25 26 27 28 29.
  • 27.
  • 28.
  • 29.
  • 30.
  • 31.
  • 32 VDD, DRAIN SUPPLY (V) Figure 7. CW Performance Figure 8. Two - Tone Intermodulation Distortion and Drain Efficiency versus Drain Supply.

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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21045/D The RF MOSFET Line RF Power Field Effect Transistors Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 500 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels measured over 3.84 MHz Bandwidth at f1 - 5 MHz and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth at f1 - 10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF. Output Power — 10 Watts Avg.
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