MRF21180R6 RF Power Field Effect Transistor

Motorola

MRF21180R6 Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.Order this document by MRF21180/D The RF Sub - Micron MOSFET Line RF Power Fi.
Short Ferrite Beads 30 pF Chip Capacitors 5.

MRF21180R6 Features

* >
* 5 MHz, f2 = f + 5 MHz 2
* Carrier W
* CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth Each Carrier Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF)
* 45 f, FREQUENCY (MHz) Figure 5. Intermodulation Distortion versus Output Power 12.5 12 G ps , POWER GAIN (dB) 11.5 1

MRF21180R6 Applications

* with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
* Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 2 x 850 mA, f1 = 2135 MHz, f2 = 2145 MHz, Ch

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Datasheet Details

Part number: MRF21180R6
Manufacturer: Motorola
File Size: 520.04 KB
Datasheet: MRF21180R6_Motorola.pdf
Description: RF Power Field Effect Transistor

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