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MRF227 - HIGH FREQUENCY TRANSISTOR

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MRF227 MAXIMUM RATINGS Rating Collector-Emitter Voltage Co Hector- Base Voltage Emitter-Base Voltage @Total Device Dissipation Tc = 25°C Derate above 25°C Storage Temperature Symbol v CEO vCBO VEBO Pd Tstg Value 16 36 400 5.0 28.5 -65 to +200 Unit Vdc Vdc mdc Watts mW/°C °C CASE 79-03, STYLE 5 HIGH FREQUENCY TRANSISTOR NPN SILICON f ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage dC = 50 mAdc, lg = 0) Collector-Emitter Breakdown Voltage Oc = 50 mAdG, Vbe = 0) Emitter-Base Breakdown Voltage (IE = 1.
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