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MRF313A - HIGH FREQUENCY TRANSISTOR

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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Tq = 25°C Derate above 25°C Storage Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol v CEO VCBO v EBO ic PD Tstg Value 30 40 3.0 150 2.5 35 -65 to +200 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C Symbol Rejc Max 28.5 Unit °C/W MRF313 MRF313A MRF313 CASE 305A-01, STYLE 1 MRF313A CASE 305-1, STYLE 1 HIGH FREQUENCY TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mAdc, Ib = 0) Collector-Emitter Breakdown Voltage C(l = 5.0 mAdc, Vbe = 0) Collector-Base Breakdown Voltage (lC = 0.
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