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MRF402 - HIGH FREQUENCY TRANSISTOR

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MRF402 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation T& = 25°C Derate above 25°C Storage Temperature Symbol VCEO VCBO v EBO "C PD • Tstg Value 18 36 4.0 0.5 1.0 5.62 -65 to +200 Unit Vdc Vdc Vdc Adc Watts mW/°C °C CASE 79-02, STYLE 1 TO-39 (TO-205AD) HIGH FREQUENCY TRANSISTOR NPN SILICON ff ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted. Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage dC = 100 mAdc, Ib = 0) Collector-Emitter Breakdown Voltage dC = 100 mAdc, Vbe = 0) Emitter-Base Breakdown Voltage (lg = 0.25 mAdc, lc = 0) Collector Cutoff Current (Vcb = 15 Vdc, Ie = 0) ON CHARACTERISTICS DC Current Gain dC = 250 mAdc, Vce = 5.
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