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MRF511 - HIGH FREQUENCY TRANSISTOR

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MRF511 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage ., Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Tq = 25°C Derate above 25°C Storage Temperature StudTorqued) (1) For Repeated Assembly use 5 In. Lb. Symbol VCEO vCBO v EBO ic PD Tstg - Value 20 35 3.5 250 5.0 28.6 - 65 to + 200 6.5 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C In. Lb. CASE 244A-01, STYLE 1 TO-117 HIGH FREQUENCY TRANSISTOR NPN SILICON ; "*r ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage (IC = 5.
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