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MRF517 - HIGH FREQUENCY TRANSISTOR

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MAXIMUM RATINGS Rating Collector-Emitter Voltage (Rbe = 330fi) Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (a T"c = 50°C Derate above 50°C Junction Temperature Storage Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol VCER vCBO v EBO "C PD Tj T stg Value 25 35 3.5 150 2.5 20.0 + 175 - 65 to + 200 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C °C Symbol R &JC Max 50 Unit °C/W MRF517 CASE 79-02, STYLE 1 TO-39 (TO-205AD) HIGH FREQUENCY TRANSISTOR NPN SILICON f ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.; Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage flC = 5.0 mAdc, q = 0) Collector-Emitter Breakdown Voltage OC = 5.
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