Datasheet4U Logo Datasheet4U.com

MRF525 - HIGH FREQUENCY TRANSISTOR

📥 Download Datasheet

Datasheet preview – MRF525

📁 Similar Datasheet

  • MRF501 - (MRF501 / MRF502) High Frequency Transistors (Motorola Semiconductor)
  • MRF502 - (MRF501 / MRF502) High Frequency Transistors (Motorola Semiconductor)
  • MRF517 - NPN SILICON HIGH FREQUENCY TRANSISTOR (ASI)
  • MRF517 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Advanced Power Technology)
  • MRF517 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi Corporation)
  • MRF5174 - NPN RF POWER TRANSISTOR (ASI)
  • MRF5175 - NPN RF POWER TRANSISTOR (ASI)
  • MRF5176 - NPN SILICON RF POWER TRANSISTOR (ASI)
  • MRF534 - HIGH FREQUENCY TRANSISTOR (Motorola Semiconductor)
  • MRF536 - HIGH FREQUENCY TRANSISTOR (Motorola Semiconductor)
Other Datasheets by Motorola
  • MRF5211LT1 - PNP Silicon HIGH-FREQUENCY TRANSISTOR
  • MRF5003 - N-CHANNEL BROADBAND RF POWER FET
  • MRF5007 - N-CHANNEL BROADBAND RF POWER FET
  • MRF5007R1 - N-CHANNEL BROADBAND RF POWER FET
  • MRF5015 - N-CHANNEL BROADBAND RF POWER FET
  • MRF5035 - N-CHANNEL BROADBAND RF POWER FET
  • MRF511 - HIGH FREQUENCY TRANSISTOR
  • MRF515 - High Frequency Transistor

Full PDF Text Transcription

Click to expand full text
MRF525 CASE 79-03, STYLE 5 TO-39 (TO-205AD) HIGH FREQUENCY TRANSISTOR NPN SILICON f MAXIMUM RATINGS Rating Collector-Emitter Voltage RgE = 330 ft Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation TA = 50°C Derate above 50°C Junction Temperature Storage Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol VCER vCBO v EBO ' 'C PD Tj T stq Value 25 35 3.5 150 2.5 0.017 + 175 - 65 to + 200 Unit Vdc Vdc Vdc mAdc Watts W/°C °C °C Symbol R 0JC Max 60 Unit °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage flC = 5.0 mAdc, Bl = 0! Collector-Emitter Breakdown Voltage Oc = 5.
Published: |