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MRF531 - HIGH FREQUENCY TRANSISTOR

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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage @Total Device Dissipation 1q = 25°C Derate above 25°C Storage Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol VCEO v CBO Vebo Pd Tsta Value 100 100 3.5 2.5 14.3 -65 to +200 Unit Vdc Vdc Vdc Watts mW/°C °C Symbol Rfljc Max 70 Unit °C/W MRF531 CASE 79-02, STYLE 1 TO-39 (TO-205AD) HIGH FREQUENCY TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.; Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage dC = 10 mAdc, Ib = 0) Collector-Base Breakdown Voltage dC = 0.1 mAdc, lg = 0) Emitter-Base Breakdown Voltage E(l = 0.
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