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MRF532 - HIGH FREQUENCY TRANSISTOR

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. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage @Total Device Dissipation T"c = 25°C Derate above 25°C Storage Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol vCEO VCBO VEBO pd T stg Value 80 80 3.5 2.5 14.3 - 60 to + 200 Unit Volts Volts Volts Watts mW/"C °C Symbol R&jc Max 70 Unit °C/W MRF532 CASE 79-02, STYLE 1 TO-39 (TO-205AD) HIGH FREQUENCY TRANSISTOR PNP SILICON f ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage dC = 10 mA) Collector-Base Breakdown Voltage dC = 0.1 mA) Emitter-Base Breakdown Voltage E(l = 0.1 mA) Collector Cutoff Current (VC e = 75 V) ON CHARACTERISTICS DC Current Gain dC = 5.
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