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MRF587 - NPN Silicon High Frequency Transistor

Features

  • C1 3.12 cm C10 C2 C1, C2.
  • 470 pF Chip (Ceramic) C3, C4.
  • 0.018 µF Chip Capacitor C5, C6.
  • 0.1 µF Mylar C7, C8.
  • 1.0 µF, 25 Vdc Electrolytic C9.
  • 91 pF Mini.
  • Unelco (C9 Taped 3.68 cm from C9.
  • Collector Connection on TL4 as shown) C10.
  • 35.
  • 45 pF Johanson Ceramic Capacitor, JMC C10.
  • 5801 or Equivalent (C10 Taped 3.12 cm from C10.
  • Base Connection on TL1) R1.
  • 2.7 kΩ, 1.
  • 1/2 W RFC1.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF587/D The RF Line NPN Silicon High-Frequency Transistor . . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications. • Low Noise Figure — NF = 3.0 dB (Typ) @ f = 500 MHz, IC = 90 mA • High Power Gain — GU(max) = 16.5 dB (Typ) @ f = 500 MHz • Ion Implanted • All Gold Metal System • High fT — 5.5 GHz • Low Intermodulation Distortion: TB3 = – 70 dB DIN = 125 dB µV • Nichrome Emitter Ballast Resistors MRF587 NF = 3.0 dB @ 0.
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