Datasheet Summary
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF587/D
The RF Line NPN Silicon High-Frequency Transistor
. . . designed for use in high- gain, low- noise, ultra- linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.
- Low Noise Figure
- NF = 3.0 dB (Typ) @ f = 500 MHz, IC = 90 mA
- High Power Gain
- GU(max) = 16.5 dB (Typ) @ f = 500 MHz
- Ion Implanted
- All Gold Metal System
- High fT
- 5.5 GHz
- Low Intermodulation Distortion: TB3 =
- 70 dB DIN = 125 dB µV
- Nichrome Emitter Ballast Resistors
NF = 3.0 dB @ 0.5 GHz HIGH- FREQUENCY TRANSISTOR NPN SILICON
MAXIMUM RATINGS
Rating Collector- Emitter Voltage Collector- Base...