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MRF604 - HIGH FREQUENCY TRANSISTOR

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MRF604 CASE 26-03, STYLE 1 TO-46 (TO/206AB) HIGH FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage @Total Device Dissipation Tc = 25°C Derate above 25°C Storage Temperature Symbol VCEO v CBO VEBO pd Tsta Value 20 40 2.0 2.5 0.04 - 65 to + 200 Unit Vdc Vdc Vdc Watts W/°C °C ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage dC = 5.0 mAdc, Bl = 0) Collector-Base Breakdown Voltage dC = 100 /uAdc, l£ = 0) Emitter-Base Breakdown Voltage (IE = 100 juAdc, lc = 0) Collector Cutoff Current (Vqe = 12 Vdc, Ib = 0) ON CHARACTERISTICS DC Current Gain dC = 50 mAdc, Vqe = 5.
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