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MRF607 - HIGH FREQUENCY TRANSISTOR

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MRF607 CASE 79-02, STYLE 1 TO-39 (TO-205AD) HIGH FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 16 Vdc Collector-Base Voltage VCBO 36 Vdc Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Tq = 75°C(1) Derate above 75°C VEBO 'C PD 4.0 0.33 3.5 28 Vdc Adc Watts mW/°C Storage Temperature T stg - 65 to + 200 °C (1) These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as class B or C RF amplifiers. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
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