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MRF6522-10R1 - RF Power Field Effect Transistor

Features

  • 6 1.68 1.61 1.55 1.49 S21 ∠φ 56 54 51 49 47 45 43 42 40 38 37 35 33 32 30 29 27 26 24 23 22 |S12| 0.033 0.033 0.034 0.032 0.031 0.030 0.029 0.028 0.028 0.026 0.025 0.025 0.023 0.022 0.022 0.021 0.020 0.020 0.019 0.018 0.017 S12 ∠φ.
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  • 48 S22 |S22|.

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Full PDF Text Transcription

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ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF6522–10/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the 960 MHz range. The MRF6522–10R1 has been specifically designed for use in Communications Network (GSM) base stations. The package offers the advantage of SMD.
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