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MRF8004 - RF AMPLIFIER TRANSISTOR

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MRF8004 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation @TC = 25°C(1) Derate above 25°C vCEO VCBO v EBO 'C PD 30 60 3.0 1.0 5.0 28.6 Vdc Vdc Vdc Adc Watts mW/°C Storage Temperature T stg - 65 to + 200 °C (1) This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. CASE 79-02, STYLE 1 TO-39 (TO-205AD) RF AMPLIFIER TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.
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