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MRF8372R1 - (MRF8372R1 / MRF8372R2) RF LOW POWER TRANSISTOR

Features

  • rs H. K. Ltd. ; 8B Tai Ping Industrial Park,.
  • US & Canada ONLY 1.
  • 800.
  • 774.
  • 1848 51 Ting Kok Road, Tai Po, N. T. , Hong Kong. 852.
  • 26629298.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF8372/D The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW Minimum Gain = 8.0 dB Efficiency 60% (Typ) • State–of–the–Art Technology Fine Line Geometry Gold Top Metal and Wires Silicon Nitride Passivated Ion Implanted Arsenic Emitters • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
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