• Part: MRF8372R1
  • Description: (MRF8372R1 / MRF8372R2) RF LOW POWER TRANSISTOR
  • Manufacturer: Motorola Semiconductor
  • Size: 266.52 KB
Download MRF8372R1 Datasheet PDF
MRF8372R1 page 2
Page 2
MRF8372R1 page 3
Page 3

Datasheet Summary

.. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF8372/D The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. - Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW Minimum Gain = 8.0 dB Efficiency 60% (Typ) - State- of- the- Art Technology Fine Line Geometry Gold Top Metal and Wires Silicon Nitride Passivated Ion Implanted Arsenic Emitters - Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. - Order MRF8372 in tape and reel packaging by adding suffix: R1 suffix = 500 units per reel R2 suffix = 2,500...