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MRF8372R2 - (MRF8372R1 / MRF8372R2) RF LOW POWER TRANSISTOR

Download the MRF8372R2 datasheet PDF. This datasheet also covers the MRF8372R1 variant, as both devices belong to the same (mrf8372r1 / mrf8372r2) rf low power transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • rs H. K. Ltd. ; 8B Tai Ping Industrial Park,.
  • US & Canada ONLY 1.
  • 800.
  • 774.
  • 1848 51 Ting Kok Road, Tai Po, N. T. , Hong Kong. 852.
  • 26629298.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF8372R1_Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF8372/D The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW Minimum Gain = 8.0 dB Efficiency 60% (Typ) • State–of–the–Art Technology Fine Line Geometry Gold Top Metal and Wires Silicon Nitride Passivated Ion Implanted Arsenic Emitters • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
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